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Preliminary
DESCRIPTION
The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0921A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm * High power gain Gp=17dB(TYP.) @f=1.9GHz * High power added efficiency hadd=40%(TYP.) @f=1.9GHz,Pin=17dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=10V * Ids=500mA * Rg=200W
Delivery
Tape & Reel
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 1800 -5.0 15 1 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=4.0mA VDS=3V,ID=500mA VDS=10V,ID=500mA,f=1.9GHz Pin=17dBm VDS=10V,ID=500mA,f=1.9GHz DVf Method --1.0 31 15 -
Limits
Typ. 1100 370 33 40 17 TBD 11 Max. 1800 -5.0 15
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
MGF0921A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin 40 80 70
Po
Vds=10V VDS=6V Id(off)=500mA ID=0.1A 35 f=1.9GHz f=1.9GHz
30 25 Po(dBm)
PAE
60 50 40 30
Gp
20 15 10 5 0 -5 0 5 10 Pin(dBm) 15 20 25
20 10 0
Pi(SCL) vs.Po(SCL),IM3 40 35 30 25 20 15 10 5 0 -5 -10 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 5 10 15 20
VD=10V ID=500mA f1=1.90GHz f2=1.91GHz
Po
IM3
-15
-10
-5
0
Pin(dBm)
Mitsubishi Electric July 1999
IM3(dBc)
Po(dBm)
Gp(dB),PAE(%)
MGF0921A
freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
S PARAMETERS
S11 Mag 0.912 0.905 0.899 0.894 0.891 0.887 0.884 0.882 0.879 0.877 0.876 0.874 0.873 0.870 0.869 0.868 0.866 0.865 0.863 0.862 0.861 0.859 0.859 0.857 0.855 0.853 0.851 0.848 0.846 0.844 0.840 0.837 0.833 0.830 Ang(deg) -106.34 -118.84 -131.17 -140.67 -147.97 -153.49 -157.81 -161.15 -163.89 -166.24 -168.30 -170.16 -172.02 -173.88 -175.65 -177.42 -179.09 179.23 177.64 176.15 174.76 173.45 172.04 170.52 168.59 166.23 163.00 160.79 158.12 155.31 152.24 149.12 145.94 142.70
(Ta=25C,VD=10V,ID=500mA, Reference Plane see Fig.1)
S21 Mag 6.799 6.141 5.495 4.998 4.593 4.251 3.956 3.694 3.462 3.251 3.058 2.882 2.720 2.570 2.429 2.298 2.175 2.060 1.951 1.847 1.749 1.655 1.567 1.482 1.402 1.326 1.255 1.185 1.117 1.054 0.991 0.927 0.862 0.797 Ang(deg) 130.67 118.82 107.04 97.79 90.14 83.49 77.65 72.40 67.66 63.32 59.30 55.47 51.96 48.55 45.45 42.46 39.57 36.79 34.20 31.62 29.15 26.87 24.51 22.33 20.15 17.95 15.95 13.83 11.78 9.82 7.81 5.78 3.73 1.64 Mag 0.057 0.056 0.055 0.054 0.054 0.054 0.053 0.053 0.053 0.053 0.052 0.052 0.052 0.053 0.053 0.054 0.054 0.055 0.056 0.057 0.058 0.059 0.060 0.061 0.063 0.065 0.066 0.069 0.070 0.073 0.075 0.078 0.081 0.084 S12 Ang(deg) 37.37 35.62 33.94 32.39 30.84 29.49 28.05 26.80 25.56 24.42 23.40 22.47 21.56 20.75 19.95 19.36 18.77 18.19 17.80 17.42 17.15 16.87 16.81 16.73 16.65 16.75 16.85 17.03 17.28 17.52 17.81 18.08 18.33 18.54 Mag 0.326 0.352 0.379 0.404 0.429 0.453 0.478 0.500 0.522 0.542 0.562 0.581 0.598 0.616 0.631 0.646 0.660 0.673 0.684 0.695 0.706 0.714 0.723 0.730 0.735 0.740 0.745 0.748 0.749 0.751 0.751 0.752 0.752 0.752 S22 Ang(deg) -147.76 -147.87 -147.94 -148.04 -148.28 -148.55 -149.05 -149.56 -150.10 -150.84 -151.60 -152.45 -153.31 -154.26 -155.31 -156.35 -157.49 -158.71 -159.93 -161.23 -162.63 -164.02 -165.51 -167.08 -168.73 -170.38 -172.04 -173.87 -175.72 -177.65 -179.59 178.45 176.48 174.49 K 0.25 0.25 0.25 0.26 0.26 0.25 0.25 0.24 0.23 0.23 0.21 0.21 0.20 0.19 0.19 0.18 0.19 0.18 0.18 0.19 0.19 0.20 0.20 0.22 0.25 0.27 0.31 0.34 0.40 0.45 0.51 0.59 0.67 0.76 MSG/MAG (dB) 20.73 20.38 19.99 19.67 19.31 18.98 18.75 18.46 18.18 17.92 17.66 17.41 17.16 16.84 16.59 16.28 16.04 15.72 15.41 15.10 14.78 14.47 14.15 13.83 13.50 13.11 12.77 12.37 12.03 11.61 11.19 10.74 10.28 9.78
2.0
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
(3)
1.20
Reference Plane (2)
4.00
(2)
0.25 2.5
0.6
(1) Gate (2) Drain (3) Source
0.3
B A C K S ID E P A T T E RN
(Unit:mm)
Fig.1 OU T LINE DR A W ING
Mitsubishi Electric July 1999
2.8

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